Memory Erase ,Program &Blank Check

A strategy was created to appraise Memory Products gadget life dependent on the consistency for breakdown charge, QBD, for steady voltage time subordinate dielectric breakdown (TDDB) and consistent flow TDDB stress tests. Albeit an Memory Products works with a consistent voltage, QBD for the passage oxide can be separated utilizing a steady current TDDB. When the charge through the passage oxide, ΔQFG, is estimated, the lower cutoff of the Memory Products life can be identified with QBD/ΔQFG. The strategy is reached by eradicate/compose cycle tests on an Memory Products.